Manipulation of stored charge in anodic aluminium oxide/SiO2 dielectric stacks by the use of pulsed anodisation

- Pulse anodisation was used to grow AAO layers with controllable stored charge.
- Stored charge density ranging from −5.2 × 1011 to 2.5 × 1012 q/cm2 was demonstrated.
- Enhancement in surface passivation was demonstrated with charge management.
- Annealing significantly reduces the positive stored charge and the interface defect.