Thermal etching of SiC

Article ID	Journal	Published Year	Pages	File Type
5357390	Applied Surface Science	2012	6 Pages	PDF

Abstract

âº Defects in SiC such as twins and stacking faults were observed using an in-lens SEM. Usually TEM is necessary to observe these defects. âº Thermal etching of SiC starts at lower temperatures than previously reported. âº Decomposition of SiC starts at lower temperatures than previously reported. âº Thermal etching is suggested as an alternative polishing method for SiC. âº 3D nano-structures develop on SiC due to decomposition.

Keywords

SiC Thermal etching Decomposition Vacuum annealing Step bunching Grain boundary grooving SEM

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

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Authors

N.G. van der Berg, Johan B. Malherbe, A.J. Botha, E. Friedland,