Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5361121 | Applied Surface Science | 2008 | 4 Pages |
Abstract
Deep level transient spectroscopy (DLTS) and high-frequency capacitance-voltage (HF-CV) measurement are used for the investigation of HfAlO/p-Si interface. The so-called “slow” interface states detected by HF-CV are obtained to be 2.68Â ÃÂ 1011Â cmâ2. Combined conventional DLTS with insufficient-filling DLTS (IF-DLTS), the true energy level position of interfacial traps is found to be 0.33Â eV above the valance band maximum of silicon, and the density of such “fast” interfacial traps is 1.91Â ÃÂ 1012Â cmâ2Â eVâ1. The variation of energy level position of such traps with different annealing temperatures indicates the origin of these traps may be the oxide-related traps very close to the HfAlO/Si interface. The interfacial traps' passivation and depassivation effect of postannealing in forming gas are shown by comparing samples annealed at different temperatures.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Ning Zhan, Min Xu, David Wei Zhang, Fang Lu,