Improved electrical and interfacial properties of RF-sputtered HfAlOx on n-GaAs with effective Si passivation

In this paper, we present the effects of ultrathin Si interfacial layer on the physical and electrical properties of GaAs MOS capacitors fabricated using RF-sputtered HfAlOx gate dielectric. It is found that HfAlOx/Si/n-GaAs stack exhibits excellent electrical properties with low frequency dispersion (∼4.8%), hysteresis voltage (0.27 V) and interface trap density (1.3 × 1012 eV−1 cm−2). The current density of 3.7 × 10−5 A/cm2 is achieved with an equivalent-oxide-thickness of 1.8 nm at VFB + 1 V for Si-passivated HfAlOx films on n-GaAs. X-ray photoelectron spectroscopy (XPS) analysis shows that the suppression of low-k interfacial layer formation is accomplished with the introduction of ultrathin Si interface control layer (ICL). Thus the introduction of thin layer of Si between HfAlOx dielectrics and GaAs substrate is an effective way to improve the interface quality such as low frequency dispersion, hysteresis voltage and leakage current. Additionally, current conduction mechanism has been studied and the dominant conduction mechanisms are found to be Schottky emission at low to medium electric fields and Poole-Frenkel at high fields and high temperatures under substrate injection. In case of gate injection, the main current conduction at low field is found to be the Schottky emission at high temperatures.