Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5367235 | Applied Surface Science | 2006 | 5 Pages |
Abstract
We have fabricated a combinatorial nm-planar electrode array by using photolithography and chemical mechanical polishing processes for high throughput electrical evaluation of organic devices. Sub-nm precision was achieved with respect to the average level difference between each pair of electrodes and a dielectric layer. The insulating property between the electrodes is high enough to measure I-V characteristics of organic semiconductors. Bottom-contact field-effect-transistors (FETs) of pentacene were fabricated on this electrode array by use of molecular beam epitaxy. It was demonstrated that the array could be used as a pre-patterned device substrate for high throughput screening of the electrical properties of organic semiconductors.
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Authors
M. Haemori, T. Edura, K. Tsutsui, K. Itaka, Y. Wada, H. Koinuma,