Wet chemical surface functionalization of oxide-free silicon

Article ID	Journal	Published Year	Pages	File Type
5420005	Progress in Surface Science	2012	19 Pages	PDF

Abstract

âº Formation and Stability of oxide-free, H-terminated Si surfaces. âº Direct and indirect functionalization of oxide-free, H-terminated Si surfaces. âº Nanopatterning of Si(111) as a selective surface-chemistry route. âº Activation and functionalization of nanopatterned, oxide-free Si(111) surfaces.

Keywords

KMC ODPA NNN TFT MPA UHV Nanopatterning LbL SAM Octadecylphosphonic acid AFM DFT MOFs ALD Methylphosphonic acid Silicon oxide bromine Fourier transform infrared Thin film transistor Self-assembled monolayers Self-assembled monolayer Kinetic Monte Carlo Hydrogen-termination Ultra-high vacuum Room temperature Atomic layer deposition Silicon surfaces silicon SiO2 X-ray photoelectron spectroscopy FT-IR XPS Surface activation Fluorine Photoluminescence Metal organic frameworks Layer-by-layer Monolayer atomic force microscopy nearest neighbor Density functional theory Hydrogen hydroxyl Organic functionalization Chlorine Iodine