| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422688 | Surface Science | 2012 | 4 Pages |
Abstract
⺠Structural model of Si(111)â31 Ã â31-In reconstruction is proposed incorporating 17 In and 31 Si atoms. ⺠This model structure has the lowest formation energy among the known models. ⺠Good resemblance between simulated and experimental STM images is observed. ⺠Model structure exhibits semiconducting properties in agreement with experiment.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
E.N. Chukurov, A.A. Alekseev, V.G. Kotlyar, D.A. Olyanich, A.V. Zotov, A.A. Saranin,