Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5437416 | Ceramics International | 2017 | 33 Pages |
Abstract
A facile, low-cost, and room-temperature UV-ozone (UVO) assisted solution process was employed to prepare zirconium oxide (ZrOx) films with high dielectric properties. ZrOx films were deposited by a simple spin-coating of zirconium acetylacetonate (ZrAcAc) precursor in the environment-friendly solvent of ethanol. The smooth and amorphous ZrOx films by UVO exhibit average visible transmittances over 90% and energy bandgap of 5.7Â eV. Low leakage current of 6.0 Ã 10â8Â A/cm2 at 3Â MV/cm and high dielectric constant of 13 (100Â Hz) were achieved for ZrOx dielectrics at the nearly room temperature. Moreover, a fully room-temperature solution-processed oxide thin films transistor (TFT) with UVO assisted ZrOx dielectric films achieved acceptable performances, such as a low operating voltage of 3Â V, high carrier mobility of 1.65Â cm2Â Vâ1Â sâ1, and on/off current ratio about 104-105. Our work indicates that simple room-temperature UVO is highly potential for low-temperature, solution-processed and high-performance oxide films and devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Xin Dong, Guodong Xia, Qian Zhang, Lubin Li, Hongyu Gong, Jianqiang Bi, Sumei Wang,