Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5440993 | Journal of Non-Crystalline Solids | 2017 | 5 Pages |
Abstract
Rare-earth-doped amorphous aluminum oxide (Al2O3:RE3Â +) thin films are attractive materials for near-IR amplifiers and lasers that can be integrated with silicon-on-insulator waveguides or deposited onto CMOS-fabricated integrated optical structures. We characterize reactively co-sputtered Al2O3:Tm3Â + films on silicon by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and Raman spectroscopy. The refractive index is systematically studied for different Tm3Â + concentrations. The resulting increase of refractive index is explained by analyzing the mechanism of incorporating Tm3Â + ions into the amorphous Al2O3 network. Sellmeier dispersion formulas are presented.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Pavel Loiko, Nur Ismail, Jonathan D.B. Bradley, Mats Götelid, Markus Pollnau,