Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5441305 | Journal of Non-Crystalline Solids | 2017 | 6 Pages |
Abstract
Non-stoichiometric hydrogenated amorphous silicon carbide thin films (α-SiC:H) were deposited by plasma-enhanced chemical vapor deposition. The samples were subsequently post-annealed at 750, 900, 1050, and 1200 °C, respectively. Photoluminescence (PL) was measured by fluorescence spectrometer at room temperature. Infrared absorption was carried out by Fourier transform infrared absorption. Chemical compositions were analyzed by X-ray photoelectron spectroscopy. The synthesis of silicon quantum dots (Si-QDs) was characterized by Raman scattering spectroscopy and directly by high-resolution transmission electron microscope. PL measurements revealed that there were complicatedly shifted sub-bands upon the thermal annealing temperature increase. The behaviors of these shifted sub-bands showed converse trends as that of the local SiC bonding densities. A possible influence for the PL by the evolvement of the local SiC bonding densities and the synthesis of Si-QDs in the α-SiC:H samples is supposed.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Guozhi Wen, Jijun Fan, Xianghu Li, Yuanyuan Liu,