Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5441344 | Journal of Non-Crystalline Solids | 2017 | 6 Pages |
Abstract
Au (metal) induced layer exchange and crystallization of amorphous Si (a-Si) on corning glass (CG) in a-Si/Au/CG thin film specimen upon vacuum annealing (~ 10â 8 mbar) is reported. The crystallization characteristics of these specimens at temperatures ranging on either side of the Au-Si eutectic temperature Te(Au-Si) are investigated. Our results shows that solid state diffusion assisted layer exchange of the a-Si and Au layer, followed by crystallization of a-Si into crystalline Si (c-Si) occur at 350 °C (below the Te). The upper limit to this crystallization mechanism was observed to be above the Te(Au-Si) and this continues till ~ 400 °C in the present study. Above this limit, the layer exchange phenomenon ceases and eutectic mixing reaction of Au-Si takes over to form diffusion limited crystalline aggregates of Si with different microstructural attributes.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Ch. Kishan Singh, T. Tah, K.K. Madapu, K. Saravanan, S. Ilango, S. Dash,