| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5441530 | Journal of Non-Crystalline Solids | 2017 | 4 Pages |
Abstract
The GeTe/Sb superlattice-like thin films are systematically investigated for the potential application in phase change memory. Compared with GeTe, GeTe/Sb film has lower crystallization temperature and activation energy. Besides, the internal stress of GeTe/Sb is less than GeTe during the crystallization. The superlattice-like structure is observed by transmission electron microscopy. The polycrystalline phase is confirmed by selected area electron diffraction. The reversible resistance switching can be realized for GeTe/Sb-based phase change memory device with an electric pulse of 8Â ns width. In addition, GeTe/Sb shows a good endurance of 6.3Â ÃÂ 106Â cycles.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yifeng Hu, Haipeng You, Xiaoqin Zhu, Hua Zou, Jianhao Zhang, Sannian Song, Zhitang Song,