Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5459717 | Journal of Alloys and Compounds | 2017 | 5 Pages |
Abstract
This paper describes a high-performance p-type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p-type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p-type SnO TFT device exhibits a very high on/off current ratio of 9.6Â ÃÂ 106, a field-effect mobility of 2.13Â cm2Â Vâ1Â sâ1, a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1Â pAÂ at a low driven voltage of <3Â V. These good characteristics can be attributed to fluorine plasma treatment on p-type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p-type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Metals and Alloys
Authors
Po-Chun Chen, Yu-Chien Chiu, Zhi-Wei Zheng, Chun-Hu Cheng, Yung-Hsien Wu,