Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5463201 | Materials Letters | 2017 | 4 Pages |
Abstract
Silicon carbide on insulator is a promising platform for electronic devices at high temperature as well as for opto-electrical applications. Utilizing the chemical inertness of SiC, this work presents a novel technique to form cubic-silicon carbide (3C-SiC) on silicon dioxide (SiO2) by using silicon wet-thermal-oxidation. Experimental data confirmed that SiO2 was successfully formed underneath of 300Â nm width SiC nanowires, while the properties of SiC was almost unaffected during the oxidation process. This simple technique will open the pathway to the development of SiCOI (SiC on insulator) based electrical and optical applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hoang-Phuong Phan, Ginnosuke Ina, Toan Dinh, Takahiro Kozeki, Tuan-Khoa Nguyen, Takahiro Namazu, Afzaal Qamar, Dzung Viet Dao, Nam-Trung Nguyen,