Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5464308 | Progress in Materials Science | 2017 | 50 Pages |
Abstract
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant research activity driven by its profound physics and enormous potential for application. This review article aims to provide a comprehensive review of recent progress in VCM in different thin films. We first present a brief summary of the modulation of magnetism by electric fields and describe its discovery, development, classification, mechanism, and potential applications. In the second part, we focus on the classification of VCM from the viewpoint of materials, where both the magnetic medium and dielectric gating materials, and their influences on magnetic modulation efficiency are systematically described. In the third part, the nature of VCM is discussed in detail, including the conventional mechanisms of charge, strain, and exchange coupling at the interfaces of heterostructures, as well as the emergent models of orbital reconstruction and electrochemical effect. The fourth part mainly illustrates the typical performance characteristics of VCM, and discusses, in particular, its promising application for reducing power consumption and realizing high-density memory in several device configurations. The present review concludes with a discussion of the challenges and future prospects of VCM, which will inspire more in-depth research and advance the practical applications of this field.
Keywords
AFMBaTiO3PLDXANESSrTiO3CoFe2O4MFMTMREELSHAADFTMPAXLDFETAHEEDLGMRnFOBTOVCMPTOPCMOTFSIEMIMXMCDBiFeO3BFONiFe2O4PbTiO3MRAMSROMTJY3Fe5O12PMN-PTLaAlO3LSMOSTOSrRuO3PEEMDensities of statesYMnO3X-ray linear dichroismSTT-MRAMLCMOCFOHEBLa1−xCaxMnO3La1−xSrxMnO3MPPRPZT1-ethyl-3-methylimidazolium2-DEGABIMPerpendicular magnetic anisotropyAntiferromagneticXASPMAALDMagnetic tunnel junctionMagnetoelectric couplingSpin Hall effectAnomalous Hall effectSpintronicsX-ray magnetic circular dichroismSOTSHEPolyethylene oxideMAEMagnetic anisotropyMagnetocrystalline anisotropyMagneto-optic Kerr effectField-effect transistoroxygen vacanciesX-ray absorption near edge structureMOKEPupDOSTERSuperconducting quantum interference deviceTemperatureCurie temperatureElectric double layerAtomic layer depositionHigh angle annular dark fieldCoercive fieldStemScreening lengthX-ray absorption spectroscopyEELS, electron energy loss spectroscopyFerroelectricFerromagneticpolarizationLAOPulsed laser depositionPotential barrierSquidIonic liquidSaturated magnetizationMagnetoresistanceTunnel magnetoresistanceGiant magnetoresistanceExchange bias fieldPhotoemission electron microscopySTEM, scanning transmission electron microscopyMagnetic force microscopyHeavy metalGate voltagePEOTwo dimensional electron gasMagnetic momentYig
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Cheng Song, Bin Cui, Fan Li, Xiangjun Zhou, Feng Pan,