Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465979 | Thin Solid Films | 2017 | 6 Pages |
Abstract
A low resistivity copper (Cu) film was used as a source/drain contact layer to fabricate high performance amorphous In-Zn-Sn-O (a-IZTO) thin-film transistors (TFTs). The calcium (Ca)-doped Cu films greatly simplified the conventional Cu/diffusion barrier stack structure and process, which allowed the production of promising a-IZTO TFTs with a saturation mobility of 22.8Â cm2/Vs and an ION/OFF ratio of 108. Furthermore, the a-IZTO TFTs with the Ca-doped Cu contact exhibited better gate bias thermal stress-induced stabilities than those with the pure Cu contact. This was attributed to the effective formation of a self-diffusion CuOx barrier at the Cu/IZTO interfaces.
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Physical Sciences and Engineering
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Authors
Sang Ho Lee, Dong Ju Oh, Ah Young Hwang, Jong Wan Park, Jae Kyeong Jeong,