Enhanced output power of InGaAs/GaAs infrared light-emitting diode with GaxIn1-xP tensile strain barrier

Various GaxIn1-xP strain barriers were evaluated for their ability to compensate for the strain of lattice mismatched InGaAs/GaAs MQWs structures. A GaxIn1-xP (χ = 0.53) tensile strain barrier, which was inserted between the n-confinement and InGaAs/GaAs multi-quantum well (MQW) active region, was effective in reducing the compressive strain caused by In0.07GaAs in multiple quantum wells (MQWs). Importantly, a remarkably enhanced PL intensity was obtained by retuning the strain of In0.07GaAs QWs based on a Ga0.53InP tensile strain barrier. A fabricated IR-LED chip, having retuned In0.08GaAs/GaAs MQWs with a Ga0.53InP tensile strain barrier, yielded double the light output power of the IR-LED chip without a Ga0.53InP strain barrier. This suggests that the use of a Ga0.53InP tensile strain barrier is essential for compensating for the compressive strain of lattice-mismatched InGaAs/GaAs MQWs with a 940 nm emitting wavelength, followed by the improved output power of the IR-LED chips.