Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5488766 | Current Applied Physics | 2017 | 6 Pages |
Abstract
A high quality, single phase InGaN film is fabricated on a GaN/Si (111) substrate by optimizing the pulse patterned In supply with a plasma-assisted MBE technique. Compositional phase separation in InGaN is considerably suppressed. The optical and structural properties of the single phase InGaN epitaxial film are consistently confirmed by atomic force microscopy, X-ray diffraction and photoluminescence measurements. We propose a growth mechanism for single phase InGaN in terms of optimal incorporation and surface migration of In atoms.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hyeonseok Woo, Hansol Jo, Jongmin Kim, Sangeun Cho, Yongcheol Jo, Cheong Hyun Roh, Jun Ho Lee, Yonggon Seo, Jungho Park, Hyungsang Kim, Cheol-Koo Hahn, Hyunsik Im,