Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5488851 | Current Applied Physics | 2017 | 23 Pages |
Abstract
Bilayer CeO2/TiO2 films with high-k dielectric property were prepared by rf magnetron sputtering technique at room temperature. Effect of annealing treatment on resistive switching (RS) properties of bilayer CeO2/TiO2 films in O2 ambient at different temperature in the range of 350-550 °C was investigated. Our results revealed that the bilayer films had good interfacial property at 500 °C and this annealing temperature is optimum for different RS characteristics. Results showed that bilayer CeO2/TiO2 film perform better uniformity and reliability in resistive switching at intermediate temperature (i.e. 450 °C and 500 °C) instead of low and high annealing temperature (i.e. 350 °C and 550 °C) at which it exhibits poor crystalline structure with more amorphous background. Less Gibbs free energy of TiO2 as compared to CeO2 results in an easier re-oxidation of the filament through the oxygen exchange with TaN electrode. However, the excellent endurance property (>2500 cycles), data retentions (105 s) and good cycle-to-cycle uniformity is observed only in 500 °C annealed devices. The plots of cumulative probability, essential memory parameter, show a good distribution of Set/Reset voltage.
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Authors
M. Ismail, A.M. Rana, S.-U. Nisa, F. Hussain, M. Imran, K. Mahmood, I. Talib, E. Ahmed, D.H. Bao,