| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5488922 | Current Applied Physics | 2017 | 11 Pages |
Abstract
We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. Further increase in Mn-doping content resulted to a comparably less THz emission, which is attributed to reduced crystallinity and higher free-carrier absorption. Under an external magnetic field, the contributions of the Bup and Bdown-related THz emission were observed to be asymmetric: possibly due to intrinsic magnetic properties of GaMnAs.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Alexander De Los Reyes, Elizabeth Ann Prieto, Karim Omambac, Jeremy Porquez, Lorenzo Jr., Karl Cedric Gonzales, John Daniel Vasquez, Mae Agatha Tumanguil, Joselito Muldera, Kohji Yamamoto, Masahiko Tani, Armando Somintac, Elmer Estacio, Arnel Salvador,