Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489017 | Current Applied Physics | 2017 | 15 Pages |
Abstract
We have investigated the performances of barristors with a graphene-tungsten disulfide (WS2) junction by varying the thickness of WS2 and gate oxide. On-current density (JON) and on- and off-current ratio (JON/JOFF) increases, and sub-threshold swing (VSS) decreases with the WS2 thickness. Also, barristors with thicker WS2 required less workfunction shift, to switch the barristors. Therefore, unlike the traditional devices, VSS of barristor with gate dielectric 300Â nm was smaller than that of 90Â nm, when the former is fabricated with thicker WS2 than the latter. Since materials properties of 2-dimensional semiconductors generally vary with their thickness, the thickness of 2D semiconductors could become a key parameter to engineer the performance of barristors with graphene and the 2D semiconductors.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Doo-Hua Choi, Jun-Ho Lee, Hyun-Cheol Kim, Han-Byeol Lee, Nae Bong Jeoung, Do-Hyun Park, Hakseong Kim, Sung Ho Jhang, Sang-Wook Lee, Hyun-Jong Chung,