Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489024 | Current Applied Physics | 2017 | 16 Pages |
Abstract
Using experimental measurements of the open-circuit voltage and the short-circuit current density at different temperatures, for a solar cell, we investigate numerically the band gap evolution with temperature for the semiconductor constituting the concerned device. The application of the approach in the case of silicon semiconductor gives satisfying results compared to previous works.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. Bensalem, M. Chegaar, A. Herguth,