Article ID Journal Published Year Pages File Type
5489024 Current Applied Physics 2017 16 Pages PDF
Abstract
Using experimental measurements of the open-circuit voltage and the short-circuit current density at different temperatures, for a solar cell, we investigate numerically the band gap evolution with temperature for the semiconductor constituting the concerned device. The application of the approach in the case of silicon semiconductor gives satisfying results compared to previous works.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Authors
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