Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5489568 | Journal of Crystal Growth | 2017 | 16 Pages |
Abstract
To obtain a high-quality AlN template on a Si substrate for high-quantum efficiency AlGaN-based deep-UV LED applications, we fabricated a high-density micro-patterned Si(111) substrate. An about 8-µm-thick AlN template was grown on the Si(111) substrate in a metal-organic chemical vapor deposition reactor by using NH3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth methods. The template had a small X-ray full width at half-maximum with rocking curves of 620 and 1141â³ for the symmetric and asymmetric (002 and 102) planes. A threading dislocation density at the best region as low as 107 cmâ2 was also obtained.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Binh Tinh Tran, Hideki Hirayama, Masafumi Jo, Noritoshi Maeda, Daishi Inoue, Tomoka Kikitsu,