Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5499852 | Chaos, Solitons & Fractals | 2017 | 5 Pages |
Abstract
ZnIn2Se4 thin films were deposited on glass substrates by thermal evaporation technique. Some of ZnIn2Se4 films were annealed under vacuum at 623 K for 2 h. Atomic force microscope (AFM) images were analyzed for as-deposited and annealed films. The roughness degree of the film surface decreased under the influence of annealing. DC Electrical conductivity studied as a function of temperature. Two activation energies were determined that ÎE1 =â0.44 eV and ÎE2 =â0.65 eV. Using thermo-electric measurements, the thermoelectric power factor (P), carrier concentration (n) and mobility (μ) were calculated. Current density-voltage characteristics of Al/ZnIn2Se4/Al sandwich structure were examined. Different mechanisms were obtained; ohmic conduction mechanism at lower voltages and space charge limited conductivity (SCLC) mechanisms at higher voltages.
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Authors
M.M. El-Nahass, A.A. Attia, H.A.M. Ali, G.F. Salem, M.I. Ismail,