Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
595223 | Colloids and Surfaces A: Physicochemical and Engineering Aspects | 2010 | 6 Pages |
Abstract
During chemical mechanical polishing, removal rates of undoped and P-doped polysilicon films as high as 200 and 250 nm/min, respectively, have been achieved using several abrasive-free solutions, each consisting of an amine or amino acid. It was observed that only α-amine(s) solutions enhance the removal rates of both undoped and P-doped polysilicon films. Potentiodynamic, zeta potential, contact angle, thermo gravimetric and EDS measurements were performed to examine the role of these α-amines in achieving high polysilicon removal rate. Possible removal mechanism of both undoped and P-doped polysilicon film in the presence and absence of the different additives is also proposed.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Colloid and Surface Chemistry
Authors
P.R. Veera Dandu, B.C. Peethala, Naresh K. Penta, S.V. Babu,