| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 609459 | Journal of Colloid and Interface Science | 2010 | 5 Pages |
InP quantum dots of 3 nm in diameter have been prepared using a dehalosilylation reaction and passivated with ZnSe to enhance photoluminescence by 6.8 times. Core–shell InP@ZnSe quantum dots dispersed in n-hexane have then been investigated using time-resolved spectroscopy to understand their photoluminescence dynamics. The observed decay times of 0.1, 7, and 1100 ns have been attributed to the relaxation times of electrons in the conduction band, trap sites, and surface states. The surface-state luminescence of core–shell InP@ZnSe quantum dots having the maximum at 760 nm has been distinguished spectrally and dynamically from their band-edge emission having the maximum at 620 nm or from their trap-site emission having the maximum at 660 nm.
Graphical abstractHighly luminescent core–shell InP@ZnSe quantum dots have been prepared via hot injection synthesis, and their photoluminescence spectroscopy and dynamics have been investigated using static and time-resolved spectroscopy.Figure optionsDownload full-size imageDownload high-quality image (76 K)Download as PowerPoint slideResearch highlights► Highly luminescent core-shell InP@ZnSe quantum dots have been prepared via hot injection synthesis. ► The roles of the surface passivation of QDs on photoluminescence have been probed by time-resolved spectroscopy. ► The photoluminescence of InP@ZnSe QDs is stronger by 6.8 times than that of InP QDs.
