| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 610646 | Journal of Colloid and Interface Science | 2009 | 6 Pages |
In this work we describe a general method for formation of Pt nanoparticles within an ultrathin film matrix and its application for non-volatile memory (NVM). Our approach involves the formation of Pt nanoparticles within ultrathin film matrix formed by covalent layer-by-layer (LbL) assembly of pyromellitic dianhydride (PMDA) and second generation of polyamidoamine (PAMAM) dendrimer in supercritical carbon dioxide (SCCO2). The hyperbranched component in the film structure serves to confine nanoparticle size and improve distribution. The memory effect and retention capability is demonstrated by means of a metal-insulator semiconductor (MIS) device fabricated using the nanoparticle-laden thin film as the insulating layer.
Graphical abstractHigh-frequency (1 MHz) C–VC–V characteristics of the MIS devices with and without Pt nanoparticles in immobilized dendrimer layer.Figure optionsDownload full-size imageDownload as PowerPoint slide
