Investigation of the effect of calcination temperature on HMDS-treated ordered mesoporous silica film

To reduce signal delay in ultra-large-scale integrated circuits, an intermetal dielectric with low dielectric constant is required. Ordered mesoporous silica film is appropriate for use as an intermetal dielectric due to its low dielectric constant and superior mechanical properties. To reduce the dielectric constant, an ordered mesoporous silica film prepared by a tetraethoxysilane/methyltriethoxysilane silica precursor and Brij-76 block copolymer was surface-modified by hexamethyldisilazane (HMDS) treatment. HMDS treatment substituted OH with Si(CH3)3 groups on the silica surface. After treatment, ordered mesoporous silica films were calcined at various calcination temperatures, and the calcination temperature to obtain optimal structural, electrical, and mechanical properties was determined to be approximately 300 °C.

Graphical abstractThough substituted Si(CH3)3 groups induce stress on silica wall in pore structure, calcination over 300 °C can reduce the stress and enhance the dielectric and mechanical properties of mesoporous film.Figure optionsDownload full-size imageDownload as PowerPoint slide