Ga2O3 and GaN nanocrystalline film: Reverse micelle assisted solvothermal synthesis and characterization

Ga2O3 nanoparticles (∼2-3 nm) are deposited on quartz substrates by non-aqueous reverse micelle mediated solvothermal process with different w values and converted to GaN nanoparticles by annealing them at 900 °C in NH3 atmosphere. Both Ga2O3 and GaN nanoparticles show strong luminescence properties.