Phosphorus diffused LPCVD polysilicon passivated contacts with in-situ low pressure oxidation

Key to this technology is the deposition of an ultra-thin silicon dioxide interlayer under high temperature and low pressure condition, performed in-situ within a single process with the polysilicon deposition. Additionally, the passivating contact structure maintains its electronic properties at temperatures of up to 900 °C and is compatible with existing industrial processes. The presented work therefore represents a significant advancement in industrially-applicable passivated contact technology.