Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6601472 | Electrochemistry Communications | 2013 | 5 Pages |
Abstract
A shell/core structural N-doped carbon/silicon carbide (N-doped C/SiC) was prepared by two-steps: pre-carbonization and N doping process. The first step was carried out on nano-SiC using acid etching method. Nanoporous amorphous carbons were formed on the surface of SiC after acid etching, which could make it easy to adsorb N source and reduce the energy needed in the next step. The prepared N-doped C/SiC exhibited a high durability and a good catalytic activity for oxygen reduction reaction.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
Hong Pan, Jianbing Zang, Liang Dong, Xiaohu Li, Yanhui Wang, Yongjiao Wang,