Article ID Journal Published Year Pages File Type
6601472 Electrochemistry Communications 2013 5 Pages PDF
Abstract
A shell/core structural N-doped carbon/silicon carbide (N-doped C/SiC) was prepared by two-steps: pre-carbonization and N doping process. The first step was carried out on nano-SiC using acid etching method. Nanoporous amorphous carbons were formed on the surface of SiC after acid etching, which could make it easy to adsorb N source and reduce the energy needed in the next step. The prepared N-doped C/SiC exhibited a high durability and a good catalytic activity for oxygen reduction reaction.
Related Topics
Physical Sciences and Engineering Chemical Engineering Chemical Engineering (General)
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