Analytical modeling of InSb/AlInSb heterostructure dual gate high electron mobility transistors

This paper presents an approximate solution of a 2D Poisson's equation within the channel region for Double-Gate AlInSb/InSb High Electron Mobility Transistors (DGHEMTs), using variable separation technique. The proposed model is used to obtain the surface potential, electric field, threshold voltage and drain current of both tied and separated gate bias conditions for Double-Gate AlInSb/InSb HEMTs. The surface potential and electric field are derived for both effective conduction paths of front and back heterointerface by a simple analytical expression and an analytical solution is verified with sentarus TCAD device simulator.