Design, realization and test of a 2.1Â GHz ultra-low phase noise oscillator based on BAW resonator

This paper presents the design and the realization of a 2.1 GHz low phase noise oscillator through a combination of BAW resonator and negative differential resistance (NDR) circuit using STMicroelectronics 0.25 m BiCMOS Technology. A new procedure which is based on the Kurokawa criterion and implemented within microwave CADs has been used to design the oscillator. A good agreement between the simulations and measurements has been achieved. The best measured phase noise was −130 dBc/Hz at 100 KHz offset from the carrier frequency of 2.1 GHz. The measured device exhibits an output power close to −4.5 dBm, with an overall power consumption of 23.8 mW.