Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6879881 | AEU - International Journal of Electronics and Communications | 2011 | 6 Pages |
Abstract
This paper presents the design and the realization of a 2.1Â GHz low phase noise oscillator through a combination of BAW resonator and negative differential resistance (NDR) circuit using STMicroelectronics 0.25Â m BiCMOS Technology. A new procedure which is based on the Kurokawa criterion and implemented within microwave CADs has been used to design the oscillator. A good agreement between the simulations and measurements has been achieved. The best measured phase noise was â130Â dBc/Hz at 100Â KHz offset from the carrier frequency of 2.1Â GHz. The measured device exhibits an output power close to â4.5Â dBm, with an overall power consumption of 23.8Â mW.
Related Topics
Physical Sciences and Engineering
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Authors
Mingdong Li, Seonho Seok, Nathalie Rolland, Paul-Allain Rolland,