Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6942061 | Displays | 2016 | 4 Pages |
Abstract
The MoO3 doped N,Nâ²-bis-(1-naphthyl)-diphenyl-1,1â²-biphenyl-4,4â²-diamine (NPB:MoO3 in 2:1 mass ratio) and 4,4â²-N,Nâ²-dicarbazole-biphenyl (CBP:MoO3 in 2:1 mass ratio) as p-doped hole transport layers have been used in inverted organic light emitting diodes (IOLEDs). Compared to the NPB/20Â nm NPB:MoO3 structure, the NPB/10Â nm CBP:MoO3/10Â nm NPB:MoO3 structure showed increased device performance, mostly because the hole transport barrier from CBP:MoO3 to NPB was smaller than that from NPB:MoO3 to NPB; it also presented improved device performance than the NPB/20Â nm CBP:MoO3 structure, ascribed to the higher conductivity of NPB:MoO3 than that of CBP:MoO3. We provide a manageable way to unlock the merits of p-doped hole transport layers for markedly increasing the performance of IOLEDs.
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Authors
Jin Song, Dashan Qin, Yuhuan Chen, Wenbo Wang, Li Chen,