Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
700779 | Diamond and Related Materials | 2012 | 4 Pages |
Current amplification at room temperature has been achieved in diamond bipolar junction transistors fabricated on (111)-oriented substrate. Improved current amplification properties were achieved by utilizing optimized phosphorus-doped diamond for reducing the series resistance of the n-type base layer. Further enhancement of characteristics including operation current, blocking voltage and reproducibility is required; however, the developed diamond bipolar transistor that works at room temperature is considered to be the first step toward realizing a high-performance power device utilizing the excellent physical properties of diamond.
Graphical abstractCurrent amplification at room temperature has been achieved in diamond bipolar junction transistors fabricated on (111)-oriented substrate. Improved current amplification properties were achieved by utilizing optimized phosphorus-doped diamond for reducing the series resistance of the n-type base layer.Figure optionsDownload full-size imageDownload as PowerPoint slide