| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 700790 | Diamond and Related Materials | 2012 | 6 Pages |
Abstract
Synthesis of hexagonal diamond on Al/Ni coated thermally oxidized SiO2 covered Si wafer substrate with photo-enhanced chemical vapor deposition (CVD) method at 450 °C is reported here. The Raman spectroscopy on grown samples shows a 1322 cm− 1 peak with 75.4 cm− 1 full width at half maximum (FWHM). The X-ray diffraction (XRD) data shows hexagonal diamond peaks. Various stages of hexagonal diamond formation are observed in the scanning electron microscope (SEM) images. Based on these images, a mechanism of hexagonal diamond nucleation and growth is proposed.
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Authors
KyungNam Kang, Yoonyoung Jin, Jeonghwan Kim, Pratul K. Ajmera,