Low temperature time of flight mobility measurements on synthetic single crystal diamond

We study the temperature dependence of low charge injection drift mobility in single crystal (SC) diamond using an alpha particle source. We present time of flight (ToF) mobility measurements to investigate the charge carrier scattering mechanisms in SC synthetic diamond in the temperature range 200 K–300 K. We have used a gold contacted pad detector, with a “sandwich” contact structure, fabricated using a SC chemical vapour deposition (CVD) diamond synthesised by Element Six Ltd. ToF analysis of alpha particle induced current pulses shows a strong increase in hole mobility at reduced temperatures, consistent with acoustic phonon scattering processes dominating the charge carrier transport. On the other hand, electron mobility values appear to remain relatively constant with lower temperatures suggesting different mechanisms than optical or acoustic phonon scattering limiting the charge transport.