Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
701131 | Diamond and Related Materials | 2008 | 5 Pages |
Abstract
We have studied on a spatial distribution of extended defects with shell-shape pits in B-doped (001) homoepitaxial diamond films using electron-beam-induced current (EBIC) and cathodoluminescence (CL) combination technique. The EBIC image corresponded to the comprehensive one of band-A emission (430Â nm) in CL measurements. In addition, both EBIC and CL images also corresponded to optical microscope image (Nomarski) with shell-shape pits. These experimental results indicate that the shell-shape pits are accompanied with localized electrically-active-defects originating from extended defects such as dislocation with band-A CL emission. It is suggested that extended defects such as dislocations result in the formation of shell-shape pits.
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Electrical and Electronic Engineering
Authors
Sung-Gi Ri, Xiao Li Yuan, Takashi Sekiguchi, Norio Tokuda, Masahiko Ogura, Hideyo Okushi, Satoshi Yamasaki,