Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
701185 | Diamond and Related Materials | 2008 | 4 Pages |
Abstract
In this investigation an attempt has been made to incorporate a high temperature stable refractory metal ohmic contact deposited onto an oxygen terminated contact area into the surface channel field effect transistor concept based on a H-terminated surface in the channel area. First transistors were fabricated. A drain current density of 75 mA/mm and a threshold voltage of Vth = −1.5 V was obtained for 1 µm gate length.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
D. Kueck, H. El-Hajj, A. Kaiser, E. Kohn,