Article ID Journal Published Year Pages File Type
701186 Diamond and Related Materials 2008 5 Pages PDF
Abstract

Synthetic diamond power Schottky structures have the capability of sustaining significant reverse voltages with rather thin drift layers. Diamond Schottky barrier diodes (SBDs) also exhibit promising on-state behaviour. This paper looks at the influence of temperature and drift doping on the forward characteristics of these devices. Physical explanations for the variation of the forward current with the forward voltage, together with equations which aim to model this dependence, are also presented.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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