Taguchi optimization of device parameters for fullerene and Poly (3-octylthiophene) based heterojunction photovoltaic devices

Photovoltaic devices were fabricated with the structure ITO/fullerene/Poly (3-octylthiophene)/Au and device parameters were optimized using Taguchi optimization technique. Optimized parameter such as fullerene and Poly (3-octylthiophene) film thickness, annealing temperature and annealing duration are found to be as 110 nm, 45 nm, 120° C and 15 min respectively. Fabricated device with optimized parameters shows short circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF) as 2 × 10− 4 mA/cm2, 0.47 V and 0.25 respectively. Effect of solvent casting on C60 layer was studied which shows formation of uneven surface providing large interfacial area.