| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 701202 | Diamond and Related Materials | 2008 | 4 Pages |
Abstract
The superior material properties of diamond power semiconductor devices make them a crucial technology. For high-voltage applications, optimized structures such as electric field edge termination are required for devices. In this paper, we have investigated the optimization of electric field relaxation techniques in oxygen-terminated p-type diamond Schottky barrier diodes and made comparisons with regard to electric field crowding and breakdown in oxides. Due to the low dielectric constant of diamond, Al2O3 is appropriate for the fabrication of field plate structures in diamond power devices.
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Authors
K. Ikeda, H. Umezawa, S. Shikata,