| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 701206 | Diamond and Related Materials | 2008 | 4 Pages |
Abstract
Polycrystalline boron nitride oxide (BNO) films are synthesized by RF magnetron sputtering. It is found that the bandgap of the BNO film increases with increasing oxygen composition. The bandgap energy as wide as 5.5 eV is obtained with oxygen composition of 17%. The electrical resistivity is estimated to be as high as 1013 Ωcm. Metal/BNO/metal structures are fabricated with various metals such as Ni, Cu and Al, and electrical characterization are performed for metal/BNO contacts. The true Schottky barrier heights are estimated for metal/BNO contacts. The true Schottky barrier height decreases with increasing metal work function. This behavior of the Schottky barrier height suggests that the BNO film has p-type electrical conduction.
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Authors
Hiroshi Sota, Naoyoshi Komatsu, Kentaro Chikamatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino,