| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 701241 | Diamond and Related Materials | 2007 | 5 Pages |
Abstract
The wettability of nanocrystalline CVD diamond films grown in a microwave plasma using Ar/CH4/H2 mixtures with tin melt (250–850 °C) and water was studied by the sessile-drop method. The films showed the highest contact angles θ of 168 ± 3° for tin among all carbon materials. The surface hydrogenation and oxidation allow tailoring of the θ value for water from 106 ± 3° (comparable to polymers) to 5° in a much wider range compared to microcrystalline diamond films. Doping with nitrogen by adding N2 in plasma strongly affects the wetting presumably due to an increase of sp2-carbon fraction in the films and formation of C–N radicals.
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Authors
L. Ostrovskaya, V. Perevertailo, V. Ralchenko, A. Saveliev, V. Zhuravlev,