Article ID Journal Published Year Pages File Type
701259 Diamond and Related Materials 2007 5 Pages PDF
Abstract

The mechanisms involved in the diamond nucleation on 3C–SiC surfaces have been investigated using a sequential in situ approach using electron spectroscopies (XPS, XAES and ELS). Moreover, diamond crystals have been studied by HRSEM. The in situ nucleation treatment allows a high diamond nucleation density close to 4 × 1010 cm− 2. During the in situ enhanced nucleation treatment under plasma, a negative bias was applied to the sample. The formation of an amorphous carbon phase and the roughening of the 3C–SiC surface have been observed. The part of these competing mechanisms in diamond nucleation is discussed.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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