| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 701274 | Diamond and Related Materials | 2007 | 4 Pages |
Abstract
A systematic investigation of heavily boron-doped diamond (001) surfaces was performed by atomic force microscopy. Heavily boron-doped diamond surfaces produced by chemical vapor deposition with boron/carbon (B/C) ratios of more than 1600 ppm in the gas phase were rough, whereas an unintentionally doped diamond surface was atomically flat. These results show that the surface roughening is due to heavy doping by boron during homoepitaxial diamond growth.
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Authors
Norio Tokuda, Hitoshi Umezawa, Takeyasu Saito, Kikuo Yamabe, Hideyo Okushi, Satoshi Yamasaki,