MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

Phosphorus incorporation in diamond can be achieved either by phosphine gas or by gaseous or liquid organic precursors of phosphorus. The main advantage of organic precursors is their lower level of toxicity. In this work, we report on the influence of the growth temperature on the phosphorus incorporation rate, the compensation ratio and the electron mobilities of homoepitaxial phosphorus-doped diamond grown using liquid tertiarybutylphosphine (TBP) as the phosphorus precursor. The incorporation rate of phosphorus is maximum at 890 °C. The highest room temperature electron mobility is 350 cm2/V s for a phosphorus concentration of 6 × 1017 cm− 3.