Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
701328 | Diamond and Related Materials | 2007 | 4 Pages |
Abstract
We have realized high-efficiency excitonic emission with deep-UV light at room temperature for a (001)-oriented diamond p–i–n junction diode consisting of the boron-doped p-type, non-doped intrinsic, and phosphorus-doped n-type layers. High-performance p–i–n junction characteristics were confirmed from current–voltage and capacitance–voltage properties. A strong UV light emission at around 240 nm due to free exciton recombination was observed at a forward current, while the broad visible light emission from deep levels was significantly suppressed compared to that of reported electroluminescence in diamond p–n junctions.
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Authors
Toshiharu Makino, Norio Tokuda, Hiromitsu Kato, Masahiko Ogura, Hideyuki Watanabe, Sung-Gi Ri, Satoshi Yamasaki, Hideyo Okushi,