Article ID Journal Published Year Pages File Type
701328 Diamond and Related Materials 2007 4 Pages PDF
Abstract

We have realized high-efficiency excitonic emission with deep-UV light at room temperature for a (001)-oriented diamond p–i–n junction diode consisting of the boron-doped p-type, non-doped intrinsic, and phosphorus-doped n-type layers. High-performance p–i–n junction characteristics were confirmed from current–voltage and capacitance–voltage properties. A strong UV light emission at around 240 nm due to free exciton recombination was observed at a forward current, while the broad visible light emission from deep levels was significantly suppressed compared to that of reported electroluminescence in diamond p–n junctions.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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