Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
701339 | Diamond and Related Materials | 2007 | 4 Pages |
Abstract
Local photoconductivity characterizations have been carried out on planar interdigitated metal-semiconductor-metal (MSM) devices fabricated on homoepitaxial CVD diamond for UV application. For this purpose a deuterium light source with an integrated UV fibre was combined and adapted to a conducting probe atomic force microscope (CP-AFM) tool. In this study, photocurrent was evidenced by local electrical resistance mapping measurements and analyzed as a function of the applied voltage and time.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
J. Alvarez, J.P. Kleider, F. Houzé, M.Y. Liao, Y. Koide,