| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 701543 | Diamond and Related Materials | 2015 | 4 Pages |
•High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated.•Cu/diamond Schottky diodes showed clear rectification up to ~ 700 °C and have high stability at ~ 400 °C.•The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C.
High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated. Cu Schottky diodes showed clear rectification up to ~ 700 °C. The current–voltage characteristics of the diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ~ 400 °C. The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky diodes are promising for high-temperature power applications.
